http://www.dictall.com/indu/187/18663285047.htm WebPred 1 dňom · Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts. Photocurrent Characteristics of Ultraviolet Photoconductive Detectors with TiO_2/ZnO Films. Picosecond photoconductivity using a graded bandgap Al/sub x/Ga/sub 1-x/As active detecting layer. Graphene Interdigital Electrodes for Improving Sensitivity in a …
persistent photoconductivityの意味・使い方・読み方 Weblio英和 …
WebNelson, R. J. (1977) Long‐lifetime photoconductivity effect inn‐type GaAlAs. Applied Physics Letters, 31 (5) ... Lang, D. V., Logan, R. A. (1977) Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors. Physical Review Letters, 39 ... Web30. apr 2024 · With a 15-V bias, the device exhibits a significant defect-related persistence photoconductivity (PCC) effect. Conversely, when the bias is lower than 7 V, no marked … customized writing journals
photoconductivity - 英中 – Linguee词典
Web1) persistent photoconductivity 持续光电导 1. The persistent photoconductivityeffect in unintentionally doped n-GaN grown by metal organic chemical vapor deposition(MOCVD)is presented. 研究了MOCVD方法制备的非故意掺杂n型GaN薄膜的持续光电导现象。 2. Optical quenching of persistent photoconductivity(PPC) in n-type unintentional doped GaN and Si … Web28. máj 2015 · After the light is turned off, the conductivity persists at room temperature, with essentially zero decay over several days. The results of electron paramagnetic resonance (EPR) measurements suggest that a point defect is responsible for PPC because the photo-induced response of one of the EPR signals is similar to that seen for the PPC. WebGaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the … customized x95